An effective modeling approach for high efficient solar cell using virtual wafer fabrication tools

In order to give a real understanding and realization of all the phenomena occurring inside the photovoltaic cell devices, the development of a reliable simulated model first is also essential. In this paper, a novel method for developing a realistic model of an efficient solar cell is presented. An efficient model of a Dual Junction InGaP/GaAs solar cell having GaAs tunnel diode is prepared and fully simulated using Silvaco VWF/ATLAS code. An optimization of window layer, ARC, BSF etc are also performed incorporating the effect of some of the different parameters on the performance of this model. The major stages of the process are explained and the simulation results are compared with published experimental data to demonstrate the accuracy of our results produced by the model utilizing this technique. For this optimized InGaP/GaAs Dual Junction cell model having 125 nm DLAR on 18 nm InAlP textured window with effective 500 nm InAlGaP bottom BSF , a maximum conversion efficiency of 32.20 % (1 sun) and 36.67 % (1000 suns) is obtained under AM1.5G illumination. The introduction of this modeling technique to the photovoltaic community will prove to be of great importance in aiding in the design and development of advanced solar cells using Silvaco Virtual Wafer Fabrication Tools. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2212

Holographic Quantum Critical Transport without Self-Duality

We describe general features of frequency-dependent charge transport near strongly interacting quantum critical points in 2+1 dimensions. The simplest description using the AdS/CFT correspondence leads to a self-dual Einstein-Maxwell theory on AdS_4, which fixes the conductivity at a frequency-independent self-dual value. We describe the general structure of higher-derivative corrections to the Einstein-Maxwell theory, and compute their implications for the frequency dependence of the quantum-critical conductivity. We show that physical consistency conditions on the higher-derivative terms allow only a limited frequency dependence in the conductivity. The frequency dependence is amenable to a physical interpretation using transport of either particle-like or vortex-like excitations.Comment: 42 pages, 7 figures. A new figure showing the frequency dependence of EM dual conductivity and few references added. Abstract, introduction, section 5 and discussion extended. To appear in Phys.Rev.

Analytical Modeling of SON MOSFET and Realization Inverter Circuit for High Speed and Ultra Dense Low Power Circuits

In the recent years, there has been considerable interest in the realization of high speed, small-size and low-power consuming devices and systems. As a consequence, the search for new principle of operation of the small-size, high speed and low-power device is becoming more and more important. In our earlier paper, it has been established that SON technology, not only improve the dc performance with reduce a short-channel effect and threshold voltage, it also improves the frequency response due to improvement in conductance and reduced parasitic effect. Further, it is already in our knowledge that SCEs are suppressed in dual material gate MOSFETs because of the perceivable step in the surface-potential profile, which screens the drain potential. The concept of dual material gate has been applied to SON MOSFETs structure and the features exhibited by resulting new SON structure has been examined for the first time by developing an analytical model and the result agree well with the MEDICI simulation values. In order to substantiate the merits of the proposed SON MOSFETs, a MOS Inverter is realized using the SON MOSFETs and its performance is investigated as an aid to the high-speed, ultra-dense and low-power circuit related work. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2779

Multipoint Correlators of Conformal Field Theories: Implications for Quantum Critical Transport

We compute three-point correlators between the stress-energy tensor and the conserved currents of conformal field theories (CFTs) in 2+1 dimensions. We first compute the correlators in the large-flavor-number expansion of conformal gauge theories and then perform the computation using holography. In the holographic approach, the correlators are computed from an effective action on (3+1)-dimensional anti-de Sitter space (AdS4) and depend upon the coefficient γ of a four-derivative term in the action. We find a precise match between the CFT and the holographic results, thus, fixing the values of γ. The CFTs of free fermions and bosons take the values γ=1/12,−1/12, respectively, and so saturate the bound ∣∣γ∣∣≤1/12 obtained earlier from the holographic theory; the correlator of the conserved gauge flux of U(1) gauge theories takes intermediate values of γ. The value of γ also controls the frequency dependence of the conductivity and other properties of quantum critical transport at nonzero temperatures. Our results for the values of γ lead to an appealing physical interpretation of particlelike or vortexlike transport near quantum phase transitions of interest in condensed-matter physics. This paper includes Appendices reviewing key features of the AdS-CFT correspondence for condensed-matter physicists.Physic

Quantum Phase Transition in Frustrated Two-Dimensional Antiferromagnets

We study frustrated, two-dimensional, quantum antiferromagnets in the vicinity of a quantum transition from a non-collinear, magnetically-ordered ground state to a quantum disordered phase. The general scaling properties of this transition are described. A detailed study of a particular field-theoretic model of the transition, with bosonic spin-1/2 spinon fields, is presented. Explicit universal scaling forms for a variety of observables are obtained and the results are compared with numerical data on the spin-1/2 triangular antiferromagnet. Universal properties of an alternative field-theory, with confined spinons, are also briefly noted.Comment: 51 pages, REVTEX 3.0, 5 uuencoded EPS figures appended, YCTP-xxz

NMR relaxation in half-integer antiferromagnetic spin chains

Nuclear relaxation in half-integer spin chains at low temperatures (T << J, the antiferromagnetic exchange constant) is dominated by dissipation from a gas of thermally-excited, overdamped, spinons. The universal low temperature dependence of the relaxation rates $1/T_1$ and $1/T_{2G}$ is computed.Comment: 7 pages, 1 uuencoded postscript figure appende